2001. 9. 7 1/2 semiconductor technical data KTA2400 epitaxial planar pnp transistor revision no : 1 differential amp. application. features matched pairs for differential amplifiers. high breakdown voltage : v ceo =-120v(min.). low noise : nf=1db(typ.), 10db(max.). complementary to ktc3400. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 2. collector 3. base + _ electrical characteristics (ta=25 1 ) note : h fe classification g h :200 400, in case of g h , h :a to g, gr: 200~400 characteristic symbol rating unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -120 v emitter-base voltage v ebo -5 v collector current i c -100 ma emitter current i e 100 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-120v, i e =0 - - -100 na emitter cut-off current i ebo v eb =-5v, i c =0 - - -100 na collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -120 - - v dc current gain h fe (note) v ce =-6v, i c =-2ma 200 - 400 collector-emitter saturation voltage v ce(sat) i c =-10ma, i b =-1ma - - -0.3 v transition frequency f t v ce =-6v, i c =-1ma - 100 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 4.0 - pf noise figure nf v ce =-6v, i c =-0.1ma, f=1khz, rg=10k u - 1.0 10 db h fe classification h fe h fe classification h fe ga 200 220 ge 310 340 gb 220 250 gf 340 370 gc 250 280 gg 370 400 gd 280 310
2001. 9. 7 2/2 KTA2400 revision no : 1 cb collector-base voltage v (v) c - v collector output capacitance cb - 1 -3 -10 10 1 i - v c ce ce collector-emitter voltage v (v) 0-2-4 c 0 collector current i (ma) -1 50 dc current gain h fe 100 collector current i (ma) c c fe h - i collector power dissipation 0 c 700 50 25 0 ambient temperature ta ( c) pc - ta collector-emitter saturation ce(sat) -0.01 -0.1 collector current i (ma) c c ce(sat) v - i i - v cbe be base-emitter voltage v (v) 0 -0.2 -0.4 -30 c 0 collector current i (ma) -5 (low current and, -6 -8 -10 -2 -3 -4 -5 i =-1 a b 0 -2 -3 -4 -5 -6 -7 -8 -9 -10 -0.1 -0.3 -1 -3 -10 -30 -50 300 500 1k 3k 5k common emitter v =-6v ta=25 c ce ta=25 c ta=100 c ta=-25 c voltage v (v) -0.3 -3 -10 -1 -50 -0.03 -0.05 -0.1 -0.3 -0.5 i /i =10 ta=25 c c b ta=100 c ta=-25 c ta=25 c -0.6 -0.8 -1.0 -1.2 -1.4 -10 -15 -20 -25 common emitter v =-6v ta=25 c ce ta = 100 c ta =-25 c ta = 25 c ob c (pf) ob -5 -30 -100 3 5 i =o f=1mhz ta=25 c e p (mw) 75 100 125 150 175 100 200 300 400 500 600 low voltage region)
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